Best Paper Award


The Best Paper Award honours the best paper of the conference. The award ceremony and speech will be part of the PCIM Asia Conference.

The Winners in 2021 is:

Lars Knoll, Gianpaolo Romano, Andrei Mihaila, Hitachi ABB Power Grids, Switzerland
3.3kV SiC Power MOSFETs with High-k Gate Dielectric

Short biography
Dr. rer. nat. Lars Knoll (male) received his PhD in Physics from RWTH University in Aachen, Germany in 2014. During his PhD he was mainly involved in fabrication, characterization and simulation of energy efficient electronic switches. In 2014 he joined ABB Corporate Research Center in Baden-Dättwil focussing on wide bandgap power semiconductor switches and diodes. Currently he is leading a team of engineers investigating new concepts for wide band-gap power semiconductor devices in voltage classes from 1.2kV to 10kV. He authored and contributed to over 80 publications, patents and patent applications in the topic of semiconductor manufacturing and designs.

Summary of the paper
In recent years, the overall performance of SiC power MOSFETs in various voltage classes has been improved by, among other things, increasing the channel width while decreasing the device pitch. In contrast to the lower voltage counterpart, high and medium voltage SiC power MOSFETs typically require severe over current capability in the third quadrant for many applications. As this high current capability is quite demanding for the MOS channel in reverse conducting operation, the bipolar body diode is preferred to take the high current in a surge event. A reduced body diode area in a small pitch device, however, may result in a significant reduction of the bipolar diode performance. 

In this work, we fabricate large pitch 3.3kV SiC MOSFETs with SiO2 and High-k gate dielectric, determine the channel contribution and investigate static and dynamic characteristics in nominal and SOA condition. Despite a comparably large pitch, the channel contribution could be reduced significantly. Moreover, repetitive operation and rugged behavior in RBSOA could be demonstrated.

This award is sponsored by:


Winner in 2020
Gaoqiang Deng, University of Electronic Science and Technology of China, China

Winner in 2019
Hao Wang, Power Integrations, China

Winner in 2018
Ming Wang, Delta Electronics, China

Winner in 2017
Puqi Ning, University of Chinese Academy of Sciences, China

Winner in 2016
Sven Matthias, ABB, Switzerland

Winner in 2015
Keijchi Higuchi, Fuji Electric, Japan

Winner in 2014
Gaolin Wang,Harbin Institute of Technology, China

Winner in 2013
Olivier Garcia, CT-Concept Technologie AG, Swizerland

Winner in 2012
Davide Chiola, Infineon Technologies Austria AG, Austria

Winner in 2011
Xing Zhang, Hefei University of Technology, China

Winner in 2010
Owen Jiang, Texas Instruments, China

Winner in 2009
Li Yongdong, Tsinghua University, China