26 – 28 June 2019 Shanghai, China More Info

IGBT Application Performance

12:40-14:00, Tuesday, 28 June 2018
Dapeng Zheng, Shenzhen Hopewind Electric, China

10:00 Development and application potential of 6500V / 900A HiPak IGBT Module with enhanced reliability

Makan Chen, ABB Switzerland, Swittzerland

A new HiPak IGBT module rated for 6500V 900A operational at 150°C has been developed based on the Enhanced Planar (EP) IGBT and Field Shielded Anode (FSA) diode technology. Design optimization made both to the IGBT and Diode have led to significantly reduced leakage currents, enabling higher maximum operating junction temperature. Simultaneously, larger active areas realized through effective area shrinkage of junction termination and a redesign of the substrate allowed an increase of the chip sizes, resulting in improvement of the current rating from standard 750 to 900A. Design details and experimental results will be presented and discussed. Furthermore, a robust passivation design has been developed and demonstrated to increase IGBT resistance to humidity, making it ideal for traction application. Finally, the simulation on power output will be presented to demonstrate the application benefit in comparison to the standard IGBT modules.
10:25 Influence of negative voltage between gate and emitter to the turn-off behavior of IGBT device

Fumio YUKAWA, Fuji Electric Co., Ltd, Japan

This paper describes about turn-off switching characteristic by the negative voltage between gate
and emitter (-VGE) for IGBT devices. Although the value of -VGE affects the turn-off switching
characteristic, that has not been investigated in detail. The experimental result shows that the
change of –VGE affects dvCE/dt and turn-off energy when the gate resistance is relatively large. In
case of the small resistance, -VGE does not affect them. It is concluded the degree of influence
become less if the gate resistance is smaller. This cause dvCE/dt slope is decided by the carrier
inside the device at the small resistance.
11:05 Expansion of power rating with 7th-Generation “X Series” RC-IGBT Modules for Industrial Applications

Akio YAMANO, Fuji Electric Co., Ltd., Japan

We have developed a reverse conducting IGBT (RC-IGBT) modules for Industrial Applications. The module
greatly reduces power dissipation and thermal resistance and enhances reliability through optimization
based on our 7th-generation “X Series” technology and RC-IGBT technology. These technology innovations
have achieved enhancements such as expansion of rated current, increased power density and
miniaturization, all of which were difficult by the combination of conventional IGBT and FWD.
High I2t capability power modules for xEV power train with leadframe and RC-IGBT combination

Akihiro Osawa, Fuji Electric, Japan

This paper describes new results of I2t capability study for IGBT modules used for xEV power train applications. Combination matrix of RC-IGBT or the conventional FWD and leadframe or bondwires were investigated, and 2.4 times higher performance was obtained in combination of RC-IGBT and leadframe compared with that of FWD and bondwires.