Wednesday afternoon, 26 June 2019
Chairperson: Dr. Gourab Majumdar, Mitsubishi Electric Corporation, Japan
A practical example of hard paralleling SiC MOSFET modules
Is it possible to design a matched gate driver and power PCB to hard parallel four 6 mΩ 1200 V SiC MOSFET modules? This was the question that this paper sets out to answer. The practical results of this design project are described including: the gate driver schematics, PCB layout with the key tracking design issues, and waveforms of both static and dynamic current sharing performance. Finally, a Monte Carlo statistical analysis to demonstrate the effects on current sharing due to production spreads in device parameters such as on resistance.
Zheng Zi qing was born in Shanghai, China in October 1982. She received the Master degree from Shanghai Maritime University of Shanghai, China in 2007. She joined Infineon Technologies China in August 2007 as Application Engineer, major responsibilities are IGBT dynamic test, IGBT adapter board design and thermal test
2nd Generation Trench Gate SiC MOSFETs for All-SiC Module
Recently the main requirements of the market are further downsizing and higher efficiency of power conversion systems. For this reason, enhancing the power density of power modules will be the key to succeed. In this paper, electrical characteristics for All SiC modules with the 2nd generation trench gate SiC MOSFETs have been presented. Moreover, it has been demonstrated that 3 rank extension for inverter capacity could be achieved by using All SiC modules rather than conventional Si IGBT modules. Therefore, these modules will realize further downsizing and higher efficiency of power conversion systems.
Li Jun received B.S. degree in mechanical engineering from South China University of Technology, China in 2003.From 2003 to 2009.He engaged in development of switching power supply products in Sumida Electric (China) Co., Ltd. Since 2009, he joined Fuji Electric (China) Co., Ltd as a design engineer of general inverter. From 2011, he was transferred to Fuji Electric (China) semiconductor department, and contributor in building local semiconductor application engineering department. His current responsibilities include various power ranges of power semiconductor module for industry, renewable energy and electrical vehicle applications.
High Voltage GaN Power HEMTs Reliability
Widespread adoption of high voltage GaN technology requires an understanding of fundamental failure modes, acceleration factors, and reliability statistics. The anticipated failure rate during a product’s first 10 to 20 years of use is of particular interest as it has direct impact on warranty costs. This paper outlines methods—based on existing industrial and automotive standards—developed for measuring GaN reliability on large samples and how the resulting data is used for extended qualification testing.
Dr. Likun Shen joined Transphorm in 2007 as a member in founding team and is presently a Sr. Member of Technical Stuff and Director of Product Engineering. He is in charge of the product development for GaN high power devices. Dr. Shen received his Ph.D. degree from UC Santa Barbara in 2004. He has worked in GaN-based microwave and power devices fields for 20+ years and has many contributions to the development of GaN HEMTs included the novel passivation method, novel epitaxial structure and processing technologies. He has authored and coauthored more than 70 papers in technical journals and international conferences, as well as 7 patents awarded or in pending.
An Integrated Gate Driver Solution for Silicon Carbide Semiconductor Applications
A gate driver solution for Silicon Carbide (SiC) semiconductors based on SIC1182K gate driver
IC, a new member of Power Integrations’ SCALE-iDriverTM family, is presented in this paper.
Due to Advanced Active Clamping and Short-Circuit Protection that are achieved using only
one input pin, the proposed SIC1182K solution not only allows full SiC power modules to be
safely turned off without experiencing excessive Drain-Source voltages but, also ensures that
the semiconductor can be turned off in case of a short-circuit event within the typical shortcircuit time.
Hao Wang was born in 1985, received his Master degree in Power Electronic Engineering from Shanghai Maritime University (China). Since 2011 he had the opportunity to make experiences in R&D position designing converter systems for Solar, UPS, and Medium Voltage Drives at Emerson Network Power Company. Since 2016 he is working as an application engineer at the Gate Drivers department of Power Integrations in Shenzhen (China).
Gate Driver Design Consideration and Optimization for Noninverting Buck-Boost Converters
In synchronous buck converters, there is a phenomenon called “dv/dt induced turn on”, which is dangerous for the switch itself and the reliability of the converter. Errors can be made when designers simply copy the gate driver parameters of a buck directly to a noninverting buck-boost converter. This paper is to fill the knowledge gap between the gate driver of a buck and that of a non-inerting buck-boost converter by discussing the similaritties and differences. Solutions are given and verified in simulation and experiments. This topic will benefit the real applications in the industry.
Wenjing Zhang, Ph.D. works as Principal Application Engineer at ON Semiconductor in the DC-DC Power Solutions Business Unit. His field of expertise includes switch-mode power supplies and power semiconductor devices electrical-thermal modeling. SPICE/Matlab simulations are also a strong-part of his knowledge. He has over 10 years of power semiconductor industry experience. He received his Ph.D. in Microelectronics and Solid State Electronics from The Graduate University of Chinese Academy of Sciences, China.