26 – 28 June 2019 Shanghai, China More Info

Advanced Power Semiconductors: WGB & New Devices

Wednesday afternoon, 26 June 2019
Chairperson: Dr. Gourab Majumdar, Mitsubishi Electric Corporation, Japan


A practical example of hard paralleling SiC MOSFET modules

Ziqing Zheng, Infineon Technologies, China

Is it possible to design a matched gate driver and power PCB to hard parallel four 6mΩ 1200V SiC MOSFET modules? This was the question that this paper set out to answer. The practical results of this project are described including:  the gate driver and power schematics, PCB layout with the key tracking design issues, and waveforms of both static and dynamic current sharing performance. Finally results to demonstrate the effects on current sharing due to spreads in device parameters such as on resistance using a Monte Carlo statistical analysis.


2nd Generation Trench Gate SiC MOSFETs for All-SiC Module

Mikiya Chonabayashi, Fuji Electric, Japan

Recently the main requirements of the market are further downsizing and higher efficiency of power conversion systems. For this reason, enhancing the power density of power modules will be the key to succeed. In this paper, electrical characteristics for All SiC modules with the 2nd generation trench gate SiC MOSFETs have been presented. Moreover, it has been demonstrated that 3 rank extension for inverter capacity could be achieved by using All SiC modules rather than conventional Si IGBT modules. Therefore, these modules will realize further downsizing and higher efficiency of power conversion systems.


High Voltage GaN Switch Reliability

Likun Shen, Transphorm, United States

Widespread adoption of high voltage GaN technology requires an understanding of fundamental failure modes, acceleration factors, and reliability statistics. The anticipated failure rate during a product’s first 10 to 20 years of use is of particular interest as it has direct impact on warranty costs. This paper outlines methods—based on existing industrial and automotive standards—developed for measuring GaN reliability on large samples and how the resulting data is used for extended qualification testing.

15:15 Coffee Break

An Integrated Gate Driver Solution for Silicon Carbide Semiconductor Applications

Hao Wang, Power Integrations, China

A gate driver solution for Silicon Carbide (SiC) semiconductors based on SIC1182K gate driver IC, a new member of Power Integrations’ SCALE-iDriverTM family, is presented in this paper. Due to Advanced Active Clamping and Short-Circuit Protection that are achieved using only one input pin, the proposed SIC1182K solution not only allows full SiC power modules to be safely turned off without experiencing excessive Drain-Source voltages but, also ensures that the semiconductor can be turned off in case of a short-circuit event within the typical short circuit time.


Gate Driver Design Consideration and Optimization for 4-Swotch Noninverting Buck-Boost Converters

Wenjing Zhang, ON Semiconductor, China

In synchronous buck converters, there is a phenomenon called “dv/dt induced turn on”, which is dangerous for the switch itself and the reliability of the converter.  Errors can be made when designers simply copy the gate driver parameters of a buck directly to a noninverting buck-boost converter. This paper is to fill the knowledge gap between the gate driver of a buck and that of a non-inerting buck-boost converter by discussing the similaritties and differences. Solutions are given and verified in simulation and experiments. This topic will benefit the real applications in the industry.