26 – 28 June 2019 Shanghai, China More Info

Special session “Electric Vehicle”

Thursday, 27 June 2019                                                         
Chairperson: Dr. Naoto Fujishima, Fuji Electric, Japan


A New Fast Reverse Recovery Super-Junction MOSFET for high efficiency and reliable EV charging applications

Sungnam Kim, ON Semiconductor, Korea

Fast DC charging pole is expanding especially in China and to make it possible to drive longer distances without spending several hours charging the battery. 3 phase input Vienna PFC and 2 level Full-bridge LLC resonant topologies are widely used in fast EV charger to increase efficiency by using 650V SJ MOSFETs under variable load condition. A fast recovery SJ MOSFET called, SUPERFET® III FRFET, combines the best-in-class body diode performance, low ROSS and improved switching transients, is highly optimized for resonant converters. In this paper, power MOSFET parameters of new fast recovery SJ MOSFETs and their impact on reliability and efficiency is analyzed in 2 level Full bridge LLC resonant converters of EV fast DC charger


Reliability evaluation of IGCT based on demanding long term application

Evgeny Tsyplakov, ABB Switzerland, Switzerland

In the last 20 years IGCT (Integrated Gate Commutated Thyristor) have been designed-in into demanding high-power applications like motor drives, interties, STATCOM, breakers and other demanding applications requiring highest reliability. Over 250,000 IGCTs are in heavy duty field operation with excellent reliability. This paper evaluates test results from accelerated testing, quality monitoring results over many years, and field reliability data with well- known load condition. Furthermore, field failure are analyzed to establish failure pattern. Finally, assessment of device lifetime estimation is made and compared with analysis of returned devices after 15 years operation under defined load condition

10:20 Coffee Break

High power IGBT modules with new compact package

Xiankui Ma, Mitsubishi Electric & Electronics, China

Besides power chip technology, package technology is important to realize IGBT modules’ high performance. New compact package (LV100) is developed to satisfy high power converter application, including high power density, easy paralleling application, low stray inductance, etc.


Evaluation of the Square-Root-t Method in Junction Temperature Measurement

Haiyang Cao, Delta Electronics, China

Determination of chip junction temperature (Tvj) is a key element in the lifetime estimation. This paper discusses what is the Square-Root-t Method and how this Method improves the accuracy of junction temperature measurement. Nevertheless, measuring with Square-Root-t Method can still cause deviation in the determination of Tvj(max), which varies with different parameters (e.g. Power loss density, material of die). The influence will be in this paper evaluated and a new fitting method will be introduced.


Enhancement of maximum current rating with 1,700V 7th-Generation “X Series” RC-IGBT Modules for Industrial Applications

Song Chen, Fuji Electric, China

 In this report, we describe 1,700V 7th-Generation “X Series” RC-IGBT Modules for Industrial Applications. IGBT modules have been increasingly required to be smaller in size while exhibiting lower power dissipation and higher reliability. Furthermore, the demand for 1,700V IGBT modules has FWD withstand capability. To meet the requirements, we have developed 1,700V reverse conducting IGBT (RC-IGBT) modules for Industrial Applications by using an RC-IGBT that integrates an IGBT and a free wheeling diode (FWD) functions into one chip. Furthermore, the module greatly improves power dissipation, thermal resistance and I2t capability through optimization based on our 7th-generation “X Series” technology and RC-IGBT technology. These technology innovations have achieved enhancements such as expansion of rated current, increased power density and miniaturization, all of which were difficult by the combination of conventional IGBT and FWD.