16 – 18 November 2020 Shanghai, China More Info

Advanced Power Semiconductors: Silicon IGBTs & Silicon Devices

Thursday, 27 June 2019                                                         
Chairperson: Dr. Naoto Fujishima, Fuji Electric, Japan

A New Fast Reverse Recovery Super-Junction MOSFET for high efficiency and reliable EV charging applications

Fast DC charging pole is expanding especially in China and to make it possible to drive longer distances without spending several hours charging the battery. 3 phase input Vienna PFC and 2 level Full-bridge LLC resonant topologies are widely used in fast EV charger to increase efficiency by using 650V SJ MOSFETs under variable load condition. A fast recovery SJ MOSFET called, SUPERFET® III FRFET, combines the best-in-class body diode performance, low ROSS and improved switching transients, is highly optimized for resonant converters. In this paper, power MOSFET parameters of new fast recovery SJ MOSFETs and their impact on reliability and efficiency is analyzed in 2 level Full bridge LLC resonant converters of EV fast DC charger

He received the B.S. and M.S. degree in electrical engineering from Hanyang University, Korea, in 2002 and 2004, respectively. His major was switching mode power supply in power electronics.

He is currently Senior Principal application engineer of high voltage power MOSFET at ON semiconductor from 2006, Bucheon, Korea.

He had various application experiences about MOSFET, IGBT, Diode, Gate drive IC and Power module in LCD/PDP/LED TV, Audio power, Welding machine, Induction Heating and EV Charger.

His research interests is improving system efficiency, loss analysis, novel evaluation method and TCAD simulation of Power MOSFET.

pic.8 Sungnam Kim

Reliability evaluation of IGCT based on demanding long-term application

In the last 20 years IGCT (Integrated Gate Commutated Thyristor) have been designed-in into demanding high-power applications like motor drives, interties, STATCOM, breakers and other demanding applications requiring highest reliability. Over 250,000 IGCTs are in heavy duty field operation with excellent reliability. This paper evaluates test results from accelerated testing, quality monitoring results over many years, and field reliability data with well- known load condition. Furthermore, field failure are analyzed to establish failure pattern. Finally, assessment of device lifetime estimation is made and compared with analysis of returned devices after 15 years operation under defined load condition

Evgeny Tsyplakov

Mr. Evgeny Tsyplakov Male, born 1964 in Uzhno-Sakhalinsk, Russia, Global Product Specialist. Mr. Tsyplakov graduated from Moscow Institute of Railway Transport (MIRTE), Worked as scientific researcher at MIRTE. Mr. Tsyplakov joined ABB Semiconductors in 1994 with main duty on Design, Qualification and Application of high power semiconductors.

Coffee Break

High power IGBT modules with new compact package

Besides power chip technology, package technology is important to realize IGBT modules’ high performance. New compact package (LV100) is developed to satisfy high power converter application, including high power density, easy paralleling application, low stray inductance, etc.

Ma Xiankui obtained his Master degree in Engineering from Hefei University of Technology in 2001. He joined Emerson as UPS hardware R&D engineer in 2001. From 2007, he starts to work for Mitsubishi Electric Semiconductor Great China(MEGC), mainly responsible for the technical support work. Currently, he is experienced at researching power devices related technologies. He is actively supporting power device applications in industry and renewable energy.

pic9 Xiankui Ma

Evaluation of the Square-Root-t Method in Junction Temperature Measurement

Determination of chip junction temperature (Tvj) is a key element in the lifetime estimation. This paper discusses what is the Square-Root-t Method and how this Method improves the accuracy of junction temperature measurement. Nevertheless, measuring with Square-Root-t Method can still cause deviation in the determination of Tvj(max), which varies with different parameters (e.g. Power loss density, material of die). The influence will be in this paper evaluated and a new fitting method will be introduced.

Foto_Haiyang Cao

Haiyang Cao was born in Hubei Province, China, 1986. He received the M.Sc. degrees in Electromobility from Chemnitz University of Technology, Chemnitz, Germany, in 2017 and the B.Sc. degrees in mechanical engineering from Dalian University of Technology, Dalian, China, in 2008.

He is presently a Sr. engineer of Packaging Advanced Team in Delta Power Electronic Center, Shanghai, China. His current research interests include packaging technology and reliability in power modules.

Enhancement of maximum current rating with 1,700V 7th-Generation “X Series” RC-IGBT Modules for Industrial Applications

We have developed a 1,700V reverse conducting IGBT (RC-IGBT) modules for Industrial Applications. The module greatly reduces power dissipation and thermal resistance and enhances reliability through optimization based on our 7th-generation “X Series” technology and RC-IGBT technology. These technology innovations have achieved enhancements such as expansion of rated current, increased power density and miniaturization, all of which were difficult by the combination of conventional IGBT and FWD.

Song Chen - Tutotrial Fuji

Graduated in School of Electronic Information and Electrical Engineering from Shanghai Jiao Tong University in 2008 and started working in Fuji Electric (China) Co., Ltd in 2010. Worked in R&D department for evaluating of inverter during 2010~2011 and for designing of power stack for wind power during 2011~2012. And now works as application engineer for IGBT application design and technical support.