Skip
PCIM23 KV 1373x733

Presentation Slides 2023

* Please note only the documents with authors' permission have post

Oral Session Tuesday, 29 August, 2023 Morning, 09:30-12:40

Keynote

1. The new generation of Gallium Nitride Power devices; breaking the limits of ease-of-use and reliability
Florin Udrea, Cambridge GaN Devices Ltd, UK

IGBT and SiC Devices

2. A Snapback-Free Reverse-Conducting LIGBT with P floating region at Collector
Wuhua Yang, Cailin Wang, Wanting Du, Chao Zhang, Xi’an University of Technology, China

3. Accurate Switching Behavior Modeling for SiC MOSFETs Considering Dynamic Output Characteristics
Yimin Zhou, Zhiqiang Wang, Yayong Yang, Guoqing Xin, Xiaojie Shi, Yong Kang, Huazhong University of Science and Technology, China

4. More than an Evolution: a New Power MOSFET Technology for Higher Efficiency of Power Supplies
Owen Song, Infineon Semiconductors Company Ltd., China
Ralf Seimieniec, Simone Mazzer, Cesar Braz, Gerhard Noebauer, Michael Hutzler, David Laforet, Elias Pree, Alessandro Ferrara, Infineon Technologies Austria AG, Austria

5. Modeling and Validation of a Silicon-Carbide Power Module
Lizhen Zhang, Roveendra Paul, James Victory, Bo Tian, onsemi, USA
Dylan Cho, onsemi, South Korea

Advanced control and associated hardware

6. Impedance Based Beat Suppression Strategy for PMSM Drives With Small DC-Link Capacitors
Dawei Ding, Runfeng Gao, Zekun Ren, Weixin Yue, Gaolin Wang, Dianguo Xu, Harbin Instiute of Technology, China

7. Reducing steady state losses in High performance Charger Topologies with easy to use GaN HEMTs
Martin Cheung, Cambridge GaN Devices, UK

8. Discussion on Power Module Solutions for 200kW Power Converter System in Energy Storage System
Jie Dong, Xin Hao, Industry Power Control Infineon Science and Technology (China) Company Limited, China

9. Analysis of Input Current Distortion in Three-phase Current Source PWM Rectifier
Binghui Li, Shuhan Zhou, Mingzhi He, Yanzi Zhang, School of Electrical Engineering, Sichuan University, China
Gao Liu, Department of Energy Technology, Aalborg University, Denmark

Poster Session Tuesday, 29 August, 2023 Afternoon, 13:30-14:30

Power Semiconductor Devices

10. A Trench Gate Reverse-Conducting IGBT with a Shallow Oxide Trench and a Floating P-Region
Wuhua Yang, Cailin Wang, Ronghua Cheng, Ruliang Zhang, Xi’an University of Technology, China

11. The Research on Influencing Factors of 650V IGBT's Turn-off dVce/dt Controllability
Rui Li, Keqiang Ma, Siliang Wang, Yi Xiang, Liangkai Liu, Ke Yang, Chengdu Semi-Future Technology Co., Ltd., China

12. Research on discrete IGBT7 H7 1200 V in inverter for Solar and UPS applications
Ming Zhou, Infineon Semiconductor (Shenzhen) Co. Ltd., China
Liwei Zhou, Infineon Technologies China Co. Ltd., China

13. Driver Optimization Method Based on GeneticAlgorithm for IGBT
Chengyang Lin, Mingcheng Ma, Tianlin Sun, Dianguo Xu, Harbin Institute of Technology, China

14. A Variable Bypass Current Source Driver Circuit Based on Reference Voltage
Mingcheng Ma, Chengyang Lin, Tianlin Sun, Dianguo Xu, Harbin Institute of Technology, China

15. Research on the Full Temperature Range Characteristics of IGBT
Tianlin Sun, Chengyang Lin, Mingcheng Ma, Dianguo Xu, Harbin Institute of Technology, China

16. Gate oxide degradation of SiC IGBT induced by non-constant thermal-electrical coupled-stresses
Rongde Luo, Fugen Wu, State Key Laboratory of Precision Electronic Manufacturing Technology and Equipment, Guangdong University of Technology, China
Rongde Luo, Fugen Wu, School of Materials and Energy, Guangdong University of Technology, China
Shaodong Yang, Xia Luo, Hao Niu, Xianjun Kuang, Zongbei Dai, No.5 Electronics Research Institute of the Ministry of Industry and Information Technology, China
Xiaowei Xu, Three Gorges Intelligent Industrial Control Technology Company, China
Huafeng Dong, School of Physics and Optoelectronic Engineering, Guangdong University of Technology, China

Motion Control

17. Direct Pressure-tolerant DC Transformer Scheme and Control Method Applied to Subsea Power Supply
Zedong Zheng, Jiye Liu, Department of Electrical Engineering, Tsinghua University, China
Lisha Chen, Chi Li, Energy Internet Innovation Institute of Tsinghua University, China

18. A New Parameter-free Predictive Current Control for PMSM
Guofu Zhang, Xiaoguang Zhang, North China University of Technology, China

19. Multi-stage model predictive current control with parameters-free for PMSM drives
Zhen Wu, Xiaoguang Zhang, North China University of Technology, China

20. An improved four-vector model for predictive current control used for PMSM drives
Shujun Fang, Xiaoguang Zhang, Ji Li, North China University of Technology, China

21. Derivation of DC Servo Driver Current Loop Model
Bin Han, Jing Qiu, Lian Yungang JARI Electronics Co., Ltd., China
Ming Yang, Harbin Institute of Technology, China

22. Self-tuning Technique of PMSM Current Loop Based on Active Damping
Qiu Jing, Yuchen Song, Lian Yungang JARI Electronics Co., Ltd., China
Ming Yang, Harbin Institute of Technology, China

Power Converters

23. Development of algorithm to control switched-mode power supply for charging battery based on extended Kalman filter
Nikolai Kalugin, Aleksei Chernyshov, EnerGet, LLC, Russia

24. Universal mathematical model of single-phase DC-DC bridge converter for different control algorithms
Yury Skorokhod, Dmitriy Sorokin, Transconverter Ltd, Russian Federation
Sergey Volskiy, Moscow Aviation Institute (Technical University), Russian Federation

25. Development of the control algorithm for the two-unit fast- charging stations
Nikolay Volskiy, Mikhail Krapivnoi, Charge Evolution ltd, Russian Federation
Darja Barkovska, Internic ltd, Latvia

26. Panoramic co-simulation technology for large-scale offshore wind power
Junyang Zhang, Xiaojiang Guo, Zheng Li, China Huaneng Clean Energy Research Institute, China

27. A Cooperative Control Strategy for AC Fault Ride Through of Offshore Wind Power Based on AC Voltage Fluctuation
Chunhua Li, Yijing Chen, Xiaojiang Guo, Xuhui Shen, Sun Xu, China Huaneng Group Clean Energy Research Institute, China

Oral Session Tuesday, 29 August, 2023 Afternoon, 14:30-16:20

Si and WBG Devices Part I

28. 2.3kV Si and SiC devices development for renewable energy system
Shuangching Chen, Yusuke Sekino, Taku Takaku, Keiji Okumura, Takafumi Uchida, Kaname Mitsuzuka, Yuichi Onozawa, Yoshiyuki Kusunoki, Yasuyuki Kobayashi, Fuji Electric Co. Ltd., Japan
Chen Song, Fuji Electric Co. Ltd., China

29. Wide Bandgap Semiconductors - a foundry perspective
Heming Wei, X-FAB Sarawak Sdn. Bhd., Malaysia
Agnes Jahnke, X-FAB Global Services GmbH, Germany

30. Using Test-to-Fail Methodology to Predict How GaN Devices Can Last More than 25 Years in Solar Applications
Shengke Zhang, Siddhesh Gajare, Ricardo Garcia, Efficient Power Conversion Corporation, USA

31. Implantation optimization for 1200 V SiC MPS with ultra-low leakage current and high surge current capability
Bo Yi, Yi Xu, Junji Cheng, Hongqiang Yang, University of Electronic Science and Technology of China, China
Keqiang Ma, Siliang Wang, Xingli Jiang, Qiang Hu, Chengdu Semi-Future Technology Co., Ltd., China

Converters

32. The Power loss reduction from continuous PWM to discontinuous PWM in a 3L ANPC converter
Heng Wang, Infineon Integrated Circuit (Beijing) Co., Ltd., China
Yixuan Wang, Infineon China Technologies, China

33. A SiC Based 3.6kW High Efficiency and High Power Density PFC Converter for Off-line Switching Mode Power Supplies
Ying Liu, Kevin Xie, Wolfspeed, China
Yuequan Hu, Anuj Narain, Wolfspeed, USA

34. A Control Strategy Enabling Compatible 1-Ph/3-Ph V2L Operations for EV Chargers with Improved Leg Utilizations
Ziheng Yuan, Peng Chen, Zhouyu Wu, Wei Wu, Helong Li, Zhiqing Yang, Shuang Zhao, Zixiang Yu, Lijian Ding, Hefei University of Technology, China
Lijun Wang, Wei Huo, OAKFORESEE INTELLIMOBILE TECH CO., LTD., China

35. 3MHz GaN DC-DC 48Vin direct to 0.6Vout realized by ultra-short pulse (5ns) using Virtual Peak Current Mode control technique
Isao Takobe, Hiroshi Yamashita, Junki Otani, Akihiro Kawano, Toshiyuki Zaitsu, ROHM CO., LTD., Japan

Oral Session Wednesday, 30 August, 2023 Morning, 09:30-12:10

Keynote

36. Packaging and Integration of Wide-Bandgap Power Semiconductors: Challenges and Opportunities
Christina DiMarino, Virginia Polytechnic Institute and State University, USA

Si and WBG Devices Part II

37. A Full SiC 60kW Three Phase LLC Converter for Fast Charger
Chen Wei, Zongzeng Hu, Jianlong Chen, Fulin Zhang, Wolfspeed, China
Anuj Narain, Wolfspeed, USA

38. Tuning GaN switching performance and operation in parallel within a bridge topology
Peter Comiskey, Cambridge GaN Devices, UK

39. 1.2 KV SOI level-shift gate driver with Miller clamp and short circuit clamp to drive SiC MOSFETs
Weidong Chu, Infineon Technologies Americas Corp., USA

40. A four-chip parallel IGBT module based on the latest generation technology used in Photovoltaic Centralized Inverter
Tao Zhang, Wang Xuanxuan, Rong Rui, Cao Shuai, Miao Shuo, Chen Guokang, Macmic science & technology Co., Ltd., China

Automotive Applications

41. Low loss and High-cooling-performance automotive power module for 160 kW EV application
Yoshihisa Ebuchi, Naoya Shimada, Yoshihiko Kawakami, Youichiro Seki, Manabu Watanabe, Souichi Yoshida, Yuuta Takeuchi, Yoshihiro Tateishi, Fuji Electric Co., Ltd, Japan

42. An advanced SiC power module designated for automotive
Hideo Komo, Rei Yoneyama, Shoichi Orita, Gourab Majumdar, Mitsubishi Electric Corporation, Japan

43. Fast-Charging Commercial Vehicles - A Megawatt Application Similar to Electrolysis
Martin Schulz, Littelfuse Europe GmbH, Germany

44. New Generation 750V IGBT modules for automotive application
Zhihong Liu, Yi Tang, Jinchun Yan, Fu Yong, Songlin Zheng, Jiajie Ma, Ye Chen, Xi Ling, Lijun Yao, StarPower Semiconductor Ltd., China

Poster Session Wednesday, 30 August, 2023 Afternoon, 13:30-14:30

Power Semiconductor Modules

45. 60kW Dual Active Bridge Converter based on 4-in-1 SiC MOSFET Module for PET Application
Jian Sun, Bo Hu, Gaosheng Song, Mitsubishi Electric & Electronics (Shanghai) Co., Ltd., China

46. Thermal model of fully-molded, multi-chip power modules
Sungmo Young, Taejin Lee, Hyukdong Kwon, Infineon Technologies Korea, South Korea

47. Introduction of RC-IGBT Based Transfer Mold SOPIPMTM
Xiaoling Wang, Mitsubishi Electric & Electronics (Shanghai) Co., Ltd., China
Jian Chen, Mitsubishi Electric GEM Power Device (Hefei) Co., Ltd., China
Akiko Goto, Power Device Works, Mitsubishi Electric Corporation, Japan

48. 30A/600V RC-IGBT Based Transfer Molded IPM for Home Appliance Application
Kai Jiang, Mitsubishi Electric & Electronics (Shanghai) Co., Ltd., China
Motonobu Joko, Power Device Works, Mitsubishi Electric Corporation, Japan
Hongguang Huang, Mitsubishi Electric & Electronics (Shanghai) Co., Ltd, China

49. An 820A 750V IGBT Module with Excellent Performance for Inverter of Electric Vehicle
Shuo Miao, Rui Rong, Chao Chen, Tao Zhang, Shuai Cao, Guokang Chen, Yadong Meng, MACMIC SCIENCE&TECHNOLOGY CO., LTD, China

50. 3rd Generation RC-IGBT for Automotive Application
Kentaro Yoshida, Shintaro Araki, Tsuyoshi Osaga, Seiichiro Inokuchi, Power Device Works, Mitsubishi Electric Corp., Japan

51. 3-level T-type 4-in-1 Module for Active Front End Solution
Haruki Murakami, Nobuya Nishida, Mitsubishi Electric Corporation, Japan
Siqing Lu, Yuancheng Zhang, Mitsubishi Electric & Electronics (Shanghai) Co., Ltd., China

Packaging Technologies

52. Study on Microstructure and Mechanical Properties of Copper-Copper Bonding by Ultrasonic Welding
Xiankun Zhang, Xiaofei Pang, Xiaodong Zhang, Jianning Zhang, China Resources Runan Chongqing Co., Ltd., China

53. Study on harmonic response of wirebond in high power IGBT module under ultrasonic welding process
Xingfeng Li, Jianxin Huang, Zhangzhen Luo, Guiqin Chang, Tinchang Shi, Haihui Luo, Qiang Xiao, Zhuzhou CRRC Times Semiconductor Co., Ltd., China
Xingfeng Li, Jianxin Huang, Zhangzhen Luo, Guiqin Chang, Tinchang Shi, Haihui Luo, Qiang Xiao, State Key Laboratory of Power Semiconductor and Integration Technology, China

54. Optimization of Pinfin Heat Sink for SiC Power Module based on LBM-LES
Jian Cui, Puqi Ning, Xiaoshuang Hui, University of Chinese Academy of Sciences, China
Jian Cui, Puqi Ning, Xiaoshuang Hu, Institute of Electrical Engineering, Chinese Academy of Sciences, China
Jian Cui, State grid Shaoxing Electric Power Company, Ltd, China

55. An Accurate 3D Thermal Simulation Method Based on Neural Network-Aided Power Loss Model
Yayong Yang, Zhiqiang Wang, Yimin Zhou, Guoqing Xin, Xiaojie Shi, Yong Kang, Huazhong University of Science and Technology, China

56. Research on the improvement of IGBT module surge capability
Chao Fang, Guiqin Chang, Xi Zou, Haihui Luo, Qiang Xiao, Yangang Wang, Zhuzhou CRRC Times Semiconductor Ltd., China
Chao Fang, Guiqin Chang, Xi Zou, Haihui Luo, Qiang Xiao, Yangang Wang, State Key Laboratory of Power Semiconductor and Integration Technology, China

57. A 1200V 600A Full SiC Half-Bridge Power Module with Low Inductance and Good Current Balancing Performance
Wenbo Wang, Jingru Dai, Yangang Wang, Dynex Semiconductor Ltd., UK

58. Low-Loss Molding Inductors analysis
Kunming Tsuo, Bourns Inc., Taiwan, China
David Wiest, Bourns Inc., USA

Oral Session Wednesday, 30 August, 2023 Afternoon, 14:30-16:20

Packaging and Reliability

59. Application benefits of TO-247 PLUS package reflow soldering in vehicle traction inverter
Zhenbo Zhao, Hao Zhang, Infineon Technologies Center of Competence (Shanghai) Co., Ltd, China

60. Method of avoiding plastic IGBT module’s torque loss in harsh application environment
Cao Shuai, Chao Chen, Rui Rong, Tao Zhang, Shuo Miao, MACMIC SCIENCE&TECHNOLOGY CO., LTD, China

61. Comprehensive Loss and Thermal Performance Analysis of Three-level T-type Grid-connected Converters
Liangliang Han, Wei Wu, Man Zhang, Helong Li, Zhiqing Yang, Shuang Zhao, Lijian Ding, Hefei University of Technology, China
Shuai Deng, Zhenyang Li, Anhui Hanxing Energy Co., Ltd., China

62. Gate Circuit improves p-GaN HEMT VTH reliability
Xinke Liu, Zengfa Chen, Ze Zhong, Qiyan Zhang, Xiaobo Li, Shuangwu Huang, Linfei Gao, College of Materials Science and Engineering, College of Electronics and Information Engineering, Institute of Microelectronics, Guangdong Research Center for Interfacial Engineering, State Key Laboratory of Radio Frequency Heterogeneous Integration, Shenzhen University, China
Feng Qiu, Yong Xu, Gensol (Shenzhen) Tech. Innovation Center Co., Ltd, China
Wenrong Zhuang, Dongguan Sino Nitride Semiconductor Co., Ltd, China
Longkou Chen, Shenzhen Baseus Technology Co., Ltd., China

High Power and Grid Applications

63. Distributed Real-Time Simulation System for Power Converter-Dominated Grid
Peilin Zhang, Zhiyu Cao, Avasition Electric Co. Ltd., Hangzhou, China
Yilong Cao, Haoyang Cui, Shanghai University of Electric Power, China

64. The MMC Based DC Transformer with Reshaped Circulating Current
Wenlong Hou, Xiaodong Zhao, Binbin Li, Dianguo Xu, School of Electrical Engineering, Harbin Institute of Technology, China

65. New generation high power semiconductors for 8GW VSC-HVDC applications
Evgeny Tsyplakov, Gaurav Gupta, Jeremy Jones, B.Boksteen, L.D. Michelis, Christian Winter, Makan Chen, Hitachi Energy Switzerland Ltd. Semiconductors, Switzerland
Jan Vobecky, Hitachi Energy s.r.o. Semiconductors, Czech Republic

66. Active Power Decoupling Based on Input Current Ripple Control for Single-Phase Voltage Source Inverter
Xun Jiang, Meiqin Mao, Wei Cheng, Research Center for Photovoltaic System Engineering of Ministry of Education, Hefei University of Technology, China
Liuchen Chang, University of New Brunswick, Canada

Keynote, Special Session & Tutorial, Thursday, 31 August, 2023 Morning, 09:30- 12:00

Keynote

67. Power Semiconductor Devices on Windpower Applications
Dapeng Zheng, Shenzhen Hopewind Electric, CN

Special Session: GaN based High Power Density Supplies

68. GaN switches enable high performance architecture for USB-PD EPR Adaptors
Pierrick Ausseresse, Alfredo Medina-Garcia, Josef Daimer, Infineon Technologies AG, Germany
Manfred Schlenk, Dr. Schlenk Consulting, Germany

69. EMI suppression techniques for very high efficiency and very high- power density medium power AC-DC adapters
Ionel Jitaru, Rompower Energy Systems Inc., USA
Andrei Savu, Rompower International SRL, Romania
Constantin Radoi, Polyethnic University of Bucharest, Romania

70. Value Proposition of Integrated GaN Solutions for Low to Medium Range Power Applications
Dong Li, Infineon Technologies Asia Pacific Pte. Ltd., Singapore

Tutorial: High-Performance Power Modules and SiC Devices

71. High-Performance Power Modules and SiC Devices
Haihui Luo, Zhuzhou CRRC Times Semiconductor Co., LTD, China

72. Performance Improvement Strategies for Discrete and Modular Wide Bandgap Devices
Sideng Hu, Zhejiang University, China