Presentation Flies
Monday, 16th November 2020, Oral Sessions
Keynote, Communication-less Coordinative Control of Distributed Energy Source Converters
High Power Density Converters
Visualization of Noise Current Distribution in Power Module
Tsuyoshi Funaki, Osaka University, Japan
78 W Auxiliary Power Supply for 22-KW Drive Using 1700 V Silicon Carbide MOSFET
Simon Shi, Infineon Technologies, China
Experimental Demonstration of Superior Vf-Err Characteristics of pin Body Diode in 1.2 kV IE-UMOSFET with a Very Short Channel Length
Taiga Kanamori, University of Tsukuba, Japan
AC/DC Converters
Active Neutral-Point-Clamped (ANPC) Three-Level Converter for High-Power Applications with Optimized PWM Strategy
Heng Wang, Infineon Integrated Circuit (Beijing), China
SiC-Based High-Density Charger Plie Power Module Design
Zhong Ye, Inventchip Technology, China
Asymmetrical IGBT Design for Three- Level NPC1 Converter in a Bidirectional Power Conversion System
Heng Wang, Infineon Integrated Circuit (Beijing), China
High Power Devices
Determination of Commutation Inductance for High-Power Semiconductors on a 3-phase DC-Link
Xiaoming Liu, Semikron Electronics (Zhuhai), China
4500V HiPak IGBT Module Rated for 1500A and 150°C for High Application
Evgeny Tsyplakov, ABB Power Grids, Switzerland
The Application Benefit of X-series 6.5kV/900A HVIGBT for Rolling Stock
Shota Saito, Mitsubishi Electric, Japan
600A/1200V S3+ IGBT Module with Fine Geometry Trench IGBT Technology for EV/HEV Application
Haibo Xiao, Zhuzhou CRRC Times Semiconductor, China
High Reliability HPnC Module for Traction Applications with 7th Generation IGBT Technology
Danyi Xiang, Fuji Electric, China
Intelligent Gate Drive
An Intelligent IGBT Gate Driver IC with Temperature Compensated Gate Side Collector Current Sensing
Rophina Li, University of Toronto, Canada
Optimize the Integrated Overcurrent Protection of Gate Driver ICs for Current Sense Range Extension
Elisabeth Preuss, Infineon Technologies, Germany
Using 1200 V Three-Phase Gate Driver to Drive SiC MOSFETs
Jinsheng Song, Infineon Technologies, United States
Foldback Current Limiting Design and Optimization for Hot-Swap and E-Fuse ICs
Wenjing Zhang, ON Semiconductor, China
Operation of a Digitally-Controlled IGBT Gate-Driver with Advance Protection Features During Short-Circuit Type II Conditions
Richa Singh, Power Integrations, Germany
Tuesday, 17th November 2020, Oral Sessions
Keynote, The Latest Technical Trend of Power Device for E-mobility
Special Session, High-Speed Railway Power Traction
Power Conversion Technologies in Green Transportation of China
Yongdong Li, Tsinghua University, China
Discussion on Reactive Power Regulation of On-Board Converter of Locomotive
Zhixue Zhang, CRRC Zhuzhou Institute, China
Control in Flux-Weakening Region of PMSM for Rail Transit
Chenchen Wang, Beijing Jiaotong University, China
Sensorless Control of Induction Motors for Electric Locomotive Traction System
Guofeng Yuan, North China University of Technology, China
Fast Switching Devices
High dV/dt Controllability of 1.2kV TCIGBT through Dynamic Avalanche Elimination
Peng Luo, University of Sheffield, United Kingdom
Effect of Process and Surface Metallization on Interfacial Reaction of Siliver Sintered Joint for Power Devices
Haoliang Zhang, Zhuzhou CRRC Times Semiconductor, China
Power Semiconductor Reliability under High Humidity
Dan Zhu, Semikron Electronics (Zhuhai), China
Thermal Management for Buck Converters Using Co-Packaged GaN Power HEMTs
Gaoqiang Deng, University of Electronic Science and Technology of China, China
Advanced Packaging Technologies
All SiC Module for Traction Inverters with 1st Generation Trench Gate SiC MOSFETs
Song Chen, Fuji Electric, China
Optimized Power Module Terminal Design for Higher Reliability
Jianwen Qiu, Semikron Electronics (Zhuhai), China
Fourth Generation Aluminum Direct Water Cooling Structure with High Reliability for Automotive Electric System
Danyi Xiang, Fuji Electric, China
Power Package Attach by Silver Sintering – Process, Performance & Reliability
Wilson Wu, MacDermid Alpha Electronics Solutions, China
Advanced Power Module Technologies for Wide Band Gap Devices
Hsueh-Kuo Liao, Delta Electronics, Taiwan, China
Advanced Power Converters Design
Comparison of 3-Level Topologies NPC and ANPC under the Aspect of Low Voltage Ride Through, SiC and Energy Storage Capability
Andreas Giessmann, Semikron Electronics (Zhuhai), China
A DC-link Voltage Estimation Based Active Damping Control Method of Single-phase Reduced DC-link Capacitance Motor Drives
Nannan Zhao, Harbin Institute of Technology, China
An Integrated Servo Motor Drive with Self-Cooling Design using SiC MOSFETs
Heng Wang, Infineon Integrated Circuit (Beijing), China
Research and Application of Solid State DC Circuit Breaker Based on SiC Series and Parallel
Lifeng Qiao, Delta Electronics (Shanghai), China
Estimation of the Battery Capacity in the Microgrid of a Nearly Zero Energy Building According to the Desired Degree of Energy Autonomy
Christos Mademlis, Aristotle University of Thessaloniki, Greece
Wednesday, 18th November 2020, Oral Sessions
Keynote, Compact and Reliable Isolated DC/DC and SiC Gate Driver for Automotive Application
DC/DC Converters
Efficiency and Robustness Analysis of a Novel SiGe Diode Utilized in a High Frequency 48V/12V DC/DC Converter
Ali Aneissi, Helmut Schmidt University, Germany
GaN, SiC or Silicon Mosfet – A Comparison Based On Power Loss Calculations
Shishir Rai, DiscoverEE, United States
Discussion of Junction Capacitance of SiC Schottky Diode on Soft-Switching Condition of LLC Resonant Converter with Cockcroft-Walton Voltage Multiplier for High-Voltage Generator
Runze Wang, University of Electronic Science and Technology of China, China
SiC Power Device Hammer and Burn-In System
Zhong Ye, Inventchip Technology, China
Wednesday, 18th November 2020, Tutorial
Modular Multilevel Converters – Operating Principles and Applications
Monday, 16th November 2020, Poster Sessions
PP001 Research on Photovoltaic Grid Connected System Based on MMC
Yannan Yu, Guilin University of Technology, China
PP002 Study on IMC Growth Behavior during Multiple Reflowing and Thermal Shock Tests of IGBT Module
Xiankun Zhang, Zhuzhou CRRC Times Semiconductor, China
PP003 On-State Characteristics Measurement of SiC MOSFET
Xiaoguang Chai, Institute of Electrical Engineering Chinese Academy of Sciences, China
PP004 High Power Density Low Loss 3600A/1700V IGBT E2 Module with New Generation IGBT Technology
Xubin Ning, Zhuzhou CRRC Times Semiconductor, China
PP005 Turn-Off Switching Loss Analysis Associated With Channel Path in Super Junction MOSFET
Geunhyoung Lee, ON Semiconductor, Republic of Korea
PP006 Robust Buffer Layer of 650 V Super-Junction MOSFET
Soohyun Kang, ON Semiconductor, Republic of Korea
PP007 3D-Printed Fluid-Cooler Baseplate for Si-IGBT Modules
David Buendgen, Institute of Power Electronics and Electrical Drives – RWTH Aachen, Germany
PP008 Cascaded Control of High-Frequency Bidirectional Multi-Phase Boost Converters Implemented on Low-Cost FPGA
Alexander Sewergin, Institute for Power Electronics and Electrical Drives (ISEA), RWTH Aachen University, Germany
PP009 Advanced 3.3kV Full SiC MOSFET Module for Vehicle Control Metro Inverters
Bo Hu, Mitsubishi Electric & Electronics (Shanghai), China
PP010 New Generation 800-V SUPERFET III MOSFET for High Efficiency and Reliability in Low-Power Applications
Dongwook Kim, ON Semiconductor, Republic of Korea
PP011 Experimental Analysis of the Current-Carrying Capacity of Discrete IGBTs in TO-247-Based Packages
Hao Zhang, Infineon Technologies, China
PP012 Balancing the Switching Losses of Paralleled SiC MOSFETs Using an Intelligent Gate Driver
Christoph Lüdecke, Institute for Power Electronics and Electrical Drives (ISEA), RWTH Aachen University, Germany
Tuesday, 17th November 2020, Poster Sessions
PP013 High Power and High Integration Transfer-Mold Type IPM
Hongguang Huang, Mitsubishi Electric & Electronics (Shanghai), China
PP014 A Half-Bridge LLC Converter Based on Digital Control
Ciqian Liu, Shanghai Maritime University, China
PP015 Simple Constitution Reducing Noise Peak Dc-Dc Converter Introducing Advanced Modulation Scheme
Atsushi Hirota, National Institute of Technology, Akashi College, Japan
PP016 Experiment-Based Investigation of Thermal Cross-Coupling of Chips in High-Power IGBT Modules
Xin Ma, Infineon Integrated Circuit (Beijing), China
PP017 Design of Electric Vehicle Hybrid Power Supply Discharge Control Strategy
Xiaodong Li, Shanxi University of Science & Technology, China
PP018 A Low Cost and High Efficiency Gate Driver for EV Module
Lizhong Zhao, Mitsubishi Electric & Electronics (Shanghai), China
PP019 Optimum Selection of 650-V SUPERFET III MOSFETs for System Efficiency, EMI and Reliability
Sungnam Kim, ON Semiconductor, Republic of Korea
PP020 Comparison of Two Types of PR-Repetitive Control Strategies Applied to Static Var Generator
Lintao Ren, Shanghai University, China
PP021 Research on Security Boundary of Active Power Distribution System with Distributed Energy Storage
Qi Xiong, North China University of Technology, China
PP022 Flexible and General Strategy of Space Vector Modulation for Multilevel Converters
Pedro dos Santos, TU Kaiserslautern, Germany
PP023 Technical Cleanliness in Electronics Manufacturing
Jianguang Ji, Zestron, China (please contact Luna.Wang@zestronChina.com for the presentation file)
PP024 Mitigation of IGBT Gate Oscillation during Short Circuit through Module Layout Improvement
Haotao Ke, Zhuzhou CRRC Times Semiconductor, China
PP025 Numerical and Experimental Study on Improving the Surge Current Capability of IGBT Power Modules
Yueping Deng, Zhuzhou CRRC Times Semiconductor, China
PP026 Hardware-in-Loop Simulation of Real-Time Cyber-Physical System for DC Microgrids
Tianling Shi, Shanghai University, China
PP027 Research on Key Technology Points for MMCHVDC System
Rui Zhao, Mitsubishi Electric & Electronics (Shanghai), China