Thursday, 27 June, 2019
Chairperson: Prof. Xuhui Wen, Chinese Academy of Science, China
A High-Power Miniaturized Wireless EV Charger with a New SiC-VMOSFET driven Single-Ended Inverter
Yuki Tono, Osaka Institute of Technology, Japan
In this paper, a high- power and high-frequency single-ended wireless EV charger with a newly developed SiC-VMOSFET is described. Losses of SiC-MOSFET and Si-IGBT under international standard high-frequency operation are discussed and it is indicated that SiC-MOSFET is suitable. Although a high voltage devise of 1700V is necessary for a 3kW high-power single-ended wireless EV charger, very high conduction loss of high voltage MOSFET makes the implementation difficult. Indicated is that a newly developed SiC-VMOSFET(V-groove trench) is the solution of this problem. In addition, FWD (Fly Wheel Diode) constructions are comparatively studied in a practical point of view.
Reliable High-temperature SiC Power Module for Automotive Traction Inverter
Chunlei Liu, ABB, Switzerland
In this paper, a reliable high-temperature power module packaging concept for the automotive powertrain is presented. Advanced joining provide superior reliability in order to meet future automotive requirements, In addition, epoxy molded modules in half-bridge configuration are designed for robustness, easy inverter integration and low costs. The power module package can accommodate both SiC and Si chips in order to offer a simple scalability for inverter classes in different power range.
Light Load Efficiency Optimization for Synchronous Converter in Passenger Vehicle
Mengyu Li, Infineon Integrated Circuit, China
In this paper, power loss is calculated precisely for each component in synchronous converter at light load. By comparing total power loss between Diode Emulation Mode (DEM) and Forced Continuous Conduction Mode (FCCM), operation mode can be selected for higher efficiency. Using DEM can increase efficiency by up to 7.8% when output current of 48-12V Buck converter is 500mA. Using FCCM can increase efficiency by up to 9.2% when output current of Boost derived LED driver is 58m A.
High Efficiency Cooling Technology for High Power Density Automotive IGBT Module
Kohei Yamauchi, Fuji Electric, Japan
An aluminum direct liquid cooling technology was applied for our IGBT module for HEV and EV applications. The high cooling capability is achieved by applying wavy fin structure which can effectively dissipate the heat generated by power semiconductor devices. In addition, this wavy fin successfully realizes the good flow speed distribution in the flow pass. Our newly developed direct liquid cooling IGBT module with high performance wavy fin realizes reduction of the thermal impedance of 20 %.
Hardware-in-Loop Real-Time Test Bed for Microgrid Systems with Multi-Level Control
Xun Jiang, Hefei University of Technology, China
Power electronic application fields have been broadened from single power supply to more and more complicated systems like smart grid interfaced with different kinds of power electronic converters because of continued evolution of renewable energy technology, which brings about great challenges to build a flexible physical platform that could adapt to test different power electronic systems in smart grid. Our research group presents a hardware-in-loop real-time testbed for microgrids consisting of multi-distributed generators, local loads with multi-level control technology. And the platform can be used in many aspects of microgrid research.