Wednesday afternoon, 26 June 2019
Chairperson: Prof. Min Chen, Zhejiang University, China
Analysis of the Reverse Conduction Characteristics and Influence of Anti-parallel SiC SBD of eGaN HEMT
Haihong Qin, Nanjing University of Aeronautics and Astronautics, China
The eGaN HEMT has become one of the most attractive power transistors in recent years due to its superior electrical performance, and provides the potential to improve the power conversion systems. Compared with silicon (Si) device, eGaN HEMT offers lower on-resistance and higher switching speed. Self-commutated reverse conduction is a very important characteristic of eGaN HEMT, especially for synchronous rectification topologies. This paper introduces the reverse conduction mechanism and characteristics of eGaN HEMT, and establishes a double pulse test platform to explore the influence of anti-parallel SiC SBD for eGaN HEMT on the reverse conduction characteristics and switching characteristics of eGaN HEMT, which will provide some help for the application of the eGaN HEMT’s self-commutated reverse conduction.
Crosstalk Mechanism and Suppression Methods for Enhancement-Mode GaN HEMTs in A Phase-Leg Topology
Zihe Peng, Nanjing University of Aeronautics and Astronautics, China
It has been demonstrated that Enhancement-mode GaN HEMT(eGaN HEMT) has lower conduction losses and higher switching speed. However, higher switching speed will cause higher dVds/dt leading to worse crosstalk problems. This paper analyzes the mechanism of crosstalk for eGaN HEMT first. Then, the mathematical model of crosstalk voltage and its influence factors are given. A double pulse test model is established and three kinds of crosstalk suppression methods without auxiliary circuit are simulated and compared. The experiment results may give a guideline for chosing which method in specific situation.
A Novel 20MHz DC/DC Resonant Converter With Soft-Switching Characteristics and Small Volume
Yueshi Guan, Harbin Institute of Technology, China
In this paper, a novel 20MHz high performance DC/DC resonant converter is proposed, which owns soft-switching characteristics, low voltage stress and small volume. With the significantly frequency improvement, the value and volume of passive components can be greatly reduced, contributing to small volume. The soft-switching characteristics is realized by detailed analytical derivation and optimal design of Class inverter stage and resonant rectifier stage. The switch voltage stress is greatly reduced by controlling high order harmonics. A 10W prototype is proposed in the laboratory and the experimental results verify the feasibility of the proposed converter and design methodology.
A Novel Type of Phase-Shift Controlled Wireless V2H with Dual-Active Single-Ended Converters
Aoto Yamamoto, Osaka Institute of Technology, Japan
This paper deals with bidirectional WPT apparatus for V2H using simple and compact single-ended converters with a new control method. Problems about stability of operating frequency and robustness to power component variation are discussed from a practical view point. Then, proposed is a variable-power constant-frequency controlled single-ended bidirectional converter under dual-active phase-shift operation. This proposed system can easily satisfy the specified frequency band of international standards and secures the stability of the power transfer operation against the variation of parameters. In addition, an improved system with a new PLL control which doesn’t need phase detector is discussed.