Wednesday afternoon, 26 June 2019
Chairperson: Prof. Min Chen, Zhejiang University, China
Analysis the Reverse Conduction Characteristic and Influence of Anti-parallel SiC SBD of eGaN HEMT
The eGaN HEMT has become one of the most attractive power transistors in recent years due to its superior electrical performance, and provides the potential to improve the power conversion systems. Compared with silicon (Si) device, eGaN HEMT offers lower on-resistance and higher switching speed. Self-commutated reverse conduction is a very important characteristic of eGaN HEMT, especially for synchronous rectification topologies. This paper introduces the reverse conduction mechanism and characteristics of eGaN HEMT, and establishes a double pulse test platform to explore the influence of anti-parallel SiC SBD for eGaN HEMT on the reverse conduction characteristics and switching characteristics of eGaN HEMT, which will provide some help for the application of the eGaN HEMT’s self-commutated reverse conduction.
Haihong Qin received the B.S. and M.S. Degrees in college of automation engineering from the Nanjing University of Aeronautics and Astronautics, Nanjing, China.
His research interests include wide band-gap devices and its application in motor drive.
Crosstalk Mechanism and Suppression Methods for Enhancement-Mode GaN HEMTs in A Phase-Leg Topology
It has been demonstrated that Enhancement-mode GaN HEMT(eGaN HEMT) has lower conduction losses and higher switching speed. However, higher switching speed will cause higher dVds/dt leading to worse crosstalk problems. This paper analyzes the mechanism of crosstalk for eGaN HEMT first. Then, the mathematical model of crosstalk voltage and its influence factors are given. A double pulse test model is established and three kinds of crosstalk suppression methods without auxiliary circuit are simulated and compared. The experiment results may give a guideline for chosing which method in specific situation.
Zihe Peng is currently pursuing the M.S. degrees in college of automation engineering from the Nanjing University of Aeronautics and Astronautics, Nanjing, China.
His research interests include power conversion technology.
A Novel 20MHz DC/DC Resonant Converter With Soft-Switching Characteristics and Small Volume
In this paper, a novel 20MHz high performance DC/DC resonant converter is proposed, which owns well soft-switching characteristics, low voltage stress and small volume. With the significantly frequency improvement, the value and volume of passive components can be greatly reduced, contributing to a small volume. The detailed analytical derivation and optimal parameter design methodology of inverter stage, matching network and resonant rectifier stage are proposed in this paper. The soft-switching characteristics can be realized in a wide operating range. A 12V input, 5V/5W output prototype is proposed in the laboratory and the experimental results verify the feasibility of the proposed converter and design methodology.
Yueshi Guan was born in Heilongjiang Province, China, in 1990. He received the B.S. degree and M.S. degrees in electrical engineering from Harbin Institute of Technology, China, in 2013 and 2015, respectively. He is currently pursuing his PH.D. degree in Harbin Institute of Technology, China. In 2018, he was a visiting graduate student in Princeton University. His research interests are in the areas of high frequency and very high frequency converters, single-stage AC/DC converter, and LED lighting systems.
A Novel Type of Phase-Shift Controlled Wireless V2H with Dual-Active Single-Ended Converters
This paper deals with bidirectional WPT apparatus for V2H using simple and compact single-ended converters with a new control method. Problems about stability of operating frequency and robustness to power component variation are discussed from a practical view point. Then, proposed is a variable-power constant-frequency controlled single-ended bidirectional converter under dual-active phase-shift operation. This proposed system can easily satisfy the specified frequency band of international standards and secures the stability of the power transfer operation against the variation of parameters. In addition, an improved system with a new PLL control which doesn’t need phase detector is discussed.
Aoto Yamamoto is currently a graduate student in Osaka Institute of Technology, Japan, and belongs to power electronics laboratory.
He presently studies bidirectional WPT for wireless V2H system, and development of SiC-MOSFET for single-ended converters.
He is a member of the institute of electrical engineers in Japan and IEEE.